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CY7C1386B - 512K x 36/1M x 18 Pipelined DCD SRAM

CY7C1386B_656525.PDF Datasheet

 
Part No. CY7C1386B CY7C1386B-150BGI CY7C1386B-167AI CY7C1386B-167BZI CY7C1386B-200AC CY7C1386B-167AC CY7C1387B-200BZC CY7C1386B-133AC CY7C1386B-133AI CY7C1386B-133BGC CY7C1386B-133BGI CY7C1386B-133BZC CY7C1386B-133BZI CY7C1386B-150AC CY7C1386B-150AI CY7C1386B-150BGC CY7C1386B-150BZC CY7C1386B-150BZI CY7C1386B-167BGC CY7C1386B-167BZC CY7C1386B-200BGC CY7C1386B-200BZC CY7C1387B CY7C1387B-133AC CY7C1387B-133BGC CY7C1387B-133BZC CY7C1387B-150AC CY7C1387B-150BGC CY7C1387B-150BZC CY7C1387B-167AC CY7C1387B-167BGC
Description 512K x 36/1M x 18 Pipelined DCD SRAM

File Size 597.54K  /  32 Page  

Maker


CYPRESS[Cypress Semiconductor]



JITONG TECHNOLOGY
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Part: CY7C1386B-167AC
Maker: Cypress Semiconductor Corp
Pack: ETC
Stock: Reserved
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 Full text search : 512K x 36/1M x 18 Pipelined DCD SRAM


 Related Part Number
PART Description Maker
CY7C1380C-200AC CY7C1380C-200BGC CY7C1380C-167AC C Memory : Sync SRAMs
PUSHBUTTON, METAL, FLAT, 22MM 5A; Switch function type:NC/NO Mom; Voltage, contact AC max:250V; Temp, op. max:55(degree C); Temp, op. min:-20(degree C); Diameter, panel cut-out:22.2mm; Length / Height, external:32mm; Dielectric RoHS Compliant: Yes
18-Mb (512K x 36/1M x 18) Pipelined SRAM 1M X 18 CACHE SRAM, 2.8 ns, PBGA165
18-Mb (512K x 36/1M x 18) Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA165
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 2.8 ns, PBGA165
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 3 ns, PQFP100
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 2.8 ns, PQFP100
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 3.4 ns, PQFP100
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
CY7C1382CV25-167AI CY7C1382CV25-200BZI CY7C1382CV2 512K x 36 pipelined SRAM, 167MHz
512K x 36/1M x 18 Pipelined SRAM 512K X 36 CACHE SRAM, 3 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 3.4 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.8 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.8 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA119
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 3 ns, PBGA119
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 3 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 3 ns, PBGA165
TRANS DARL PNP 100V 8A TO-220FP 1M X 18 CACHE SRAM, 3.4 ns, PQFP100
512K x 36 pipelined SRAM, 225MHz
Cypress Semiconductor, Corp.
AS7C25512PFD32_36A AS7C25512PFD32A AS7C25512PFD32A 2.5V 512K x 32/36 pipelined burst synchronous SRAM 512K X 32 STANDARD SRAM, 3.8 ns, PQFP100
2.5V 512K x 32/36 pipelined burst synchronous SRAM 2.5V的为512k × 32/36管线爆裂同步SRAM
2.5V 512K x 32/36 pipelined burst synchronous SRAM 512K X 32 STANDARD SRAM, 3.5 ns, PQFP100
Sync SRAM - 2.5V
Alliance Semiconductor, Corp.
Alliance Semiconductor Corporation
ALSC
Alliance Semiconductor Corp...
IDT71V65602S-100BQI IDT71V65802S-100BQI IDT71V6580 256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 256K × 3612K采样× 18 3.3同步ZBT SRAM.5VI / O的脉冲计数器输出流水
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 256K X 36 ZBT SRAM, 4.2 ns, PBGA165
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 512K X 18 ZBT SRAM, 4.2 ns, PBGA119
3.3V 256K X 36 ZBT Synchronous 2.5V I/O PipeLined SRAM
3.3V 512K x 18 ZBT Synchronous 2.5V I/O PipeLined SRAM
Integrated Device Techn...
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GVT71256D36B-5 GVT71256D36T-5 GVT71256D36T-4.4 GVT 256K x 36 pipelined SRAM, 200MHz
256K x 36 pipelined SRAM, 225MHz
256K x 36 pipelined SRAM, 150MHz
256K x 36 pipelined SRAM, 166MHz
512K x 18 pipelined SRAM, 225MHz
512K x 18 pipelined SRAM, 150MHz
512K x 18 pipelined SRAM, 166MHz
512K x 18 pipelined SRAM, 200MHz
Cypress
CY7C1380D 18-Mbit (512K x 36/1M x 18) Pipelined SRAM(18-Mb (512K x 36/1M x 18)管道式SRAM) 18兆位(为512k × 36/1M × 18)流水线的SRAM18 - MB的(12k × 36/1M × 18)管道式的SRAM
Cypress Semiconductor Corp.
GS8162Z18B-133 GS8162Z18B-133I GS8162Z18B-200 GS81 133MHz 8.5ns 1M x 18 18MB pipelined and flow through synchronous NBT SRAM
200MHz 6.5ns 1M x 18 18MB pipelined and flow through synchronous NBT SRAM
150MHz 7.5ns 512K x 36 18MB pipelined and flow through synchronous NBT SRAM
250MHz 5.5ns 1M x 18 18MB pipelined and flow through synchronous NBT SRAM
225MHz 6ns 512K x 36 18MB pipelined and flow through synchronous NBT SRAM
166MHz 7ns 1M x 18 18MB pipelined and flow through synchronous NBT SRAM
200MHz 6.5ns 512K x 36 18MB pipelined and flow through synchronous NBT SRAM
225MHz 6ns 1M x 18 18MB pipelined and flow through synchronous NBT SRAM
133MHz 8.5ns 512K x 36 18MB pipelined and flow through synchronous NBT SRAM
166MHz 7ns 512K x 36 18MB pipelined and flow through synchronous NBT SRAM
250MHz 5.5ns 512K x 36 18MB pipelined and flow through synchronous NBT SRAM
GSI Technology
CY7C1380DV25-250BZXI CY7C1380DV25-200BZC CY7C1380D 18-Mbit (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 2.6 ns, PBGA165
18-Mbit (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 3 ns, PBGA165
18-Mbit (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 3 ns, PQFP100
Cypress Semiconductor, Corp.
CY7C1370DV25 18-Mbit (512K x 36/1M x 18) Pipelined SRAM with NoBL Architecture(18-Mb (512K x 36/1M x 18)管道式SRAM(NoBL结构 18兆位(为512k × 36/1M × 18)与总线延迟建筑18 MB的(12k × 36/1M × 18)管道式静态存储器(总线延迟结构)流水线的SRAM
Cypress Semiconductor Corp.
CY7C1370CV CY7C1372CV25-250BZI CY7C1370CV25 CY7C13 512K x 36/1M x 18 Pipelined SRAM with NoBL Architecture
512K x 36/1M x 18 Pipelined SRAM with NoBL(TM) Architecture
512K x 36/1M x 18 Pipelined SRAM with NoBL⑩ Architecture
CYPRESS[Cypress Semiconductor]
IDT71V67603S166BGGI IDT71V67803S133PFG IDT71V67803 3.3V 512K x 18 Synchronous 3.3V I/O PipeLined SRAM
3.3V 256K x 36 Synchronous 3.3V I/O PipeLined SRAM
256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect 512K X 18 CACHE SRAM, 3.8 ns, PQFP100
256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect 512K X 18 CACHE SRAM, 3.8 ns, PBGA165
256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect 512K X 18 CACHE SRAM, 3.5 ns, PBGA165
256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect 512K X 18 CACHE SRAM, 4.2 ns, PQFP100
IDT
INTEGRATED DEVICE TECHNOLOGY INC
DB Lectro, Inc.
Integrated Device Technology, Inc.
 
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